【Conference】
ESSPRIME2016 in Hawai, 3 - 7 October 2016
”Combined Surface Activated Bonding Technique for Low-Temperature Cu/Dielectric Hybrid Bonding”
Joint paper: Tadatomo Suga, Professor of School of Engineering, The University of Tokyo
【Conference】
JIEP MES2016 Chukyo University, 8 - 9 September 2016
”Combined Surface Activated Bonding Technique for Low-Temperature Cu/Dielectric Hybrid Bonding”
Joint paper: Tadatomo Suga, Professor of School of Engineering, The University of Tokyo
【Conference】
IMPACT in Taipei, 22 October 2015
”Surface Activation Bonding-A Low Temperature bonding process for next generation interconnect technology”
【Conference】
JIEP, 18 March 2015
”Combined Surface Activated Bonding Technologies for New Approach to Low Temperature Wafer Bonding”
Joint paper: Tadatomo Suga, Professor of School of Engineering, The University of Tokyo
【Conference】
ECS2014 in CANCUN, 8 October 2014
”Combined Surface Activated Bonding Technologies for New Approach to Low Temperature Wafer Bonding”
Joint paper: Tadatomo Suga, Professor of School of Engineering, The University of Tokyo
【Award】
Excellence technology Prize for a medium sized company in Kyoto, 25 February 2012
“Surface activated bonder for large diameter semiconductor wafer”
【Media】
Nikkan Kogyo Shimbun, 28 October 2011
“Challenge of an innovative company in Kyoto. “Alignment is a key technology.”
【Media】
Electronic journal, 5 August 2011
“Wafer bonder in the 2011 micromachine/MEMS technology”
【Media】
Japan Chemical Daily。3 June 2011
“The room temperature bonding technology for inorganic wafer is used for 3D stack etc.”
【Media】
Japan Chemical Daily, 3 June 2011
“Room temperature bonding by nano adhesive layer.”
【Lecture】
Mitsubishi-UFJ Technology Development Foundation, 16 February 2011
“Unique technology of alignment for semiconductor equipment and Bondtech business model”
【Media】
The Kyoto Shimbun, 15 February 2011
Konnichiwa laboratory
“Make an attempt at extremely small bonding technology”
【Media】
Nikkan Kogyo Shimbun, 22 July 2010
“A new surface activated bonding system from Bondtech, released by Marubeni Information Systems”
【Media】
The Nikkei, 1 July 2010
“Make it possible to stacked chip in low temperature”
【Media】
Nikkei business daily, 21 June 2010
“Wafer and wafer bonding, high accuracy, correction of a position by IR and process reduction.”
【Media】
Nikkei business daily, 25 May 2010
“Multi layers semiconductor equipment. Chip place within 0.2 um accuracy.”
【Conference】
JIEP, 12 March 2010
“Development of high precision high vacuum bonding system”
【Lecture】
Japan photo fabrication association, 16 February 2010
“Technology trend and foresight for camera module in cell-phone.”
“Room Temperature 3D packaging by Surface Activated Bonding and UV imprint technology (CIS Lens forming and Wafer Level Packaging)”
【Lecture】
NE Academy, 18 November 2009
Nikkei micro device seminar
“Low temperature and low pressure bonding technology.
4 types of surface activated method and high accurate alignment for Mass production”
【Media】
International Journal, November 2009
“Venture company, Bondtech, having development power at the cutting edge of innovative technology”
【Media】
Electronic Device Industry News, 5 August 2009
“Bondtech, venture company for bonding system started.
High precision alignment technology of Bondtech expands the business to MEMS and 3D packaging as well as CIS.”
【Media】
Electronic journal, August 2009
“Alignment & bonding system for Micro machine/MEMS”
【Conference】
SEMI SIS2008, 3 November 2008
“Surface Activated Bonding Technology and MEMS application”
【Conference】
ECS2008 Honolulu, 12 October 2008
10th International Symposium on Semiconductor Wafer Bonding Science, Technology and Applications
“Hybrid Bonding (Plasma activation and Anodic bonding) for Vacuum Sealing”