LSI has achieved high performance and low power consumption by micro-fabrication technology. Nowadays because of the current issues such as increasing leak current caused by the minimization of the physical size, technical limitation of wavelengths in photolithography process, etc., another technology by three-dimensional integration that helps to enhance the LSI performance has come to the front. Three-dimensional integration, making shorten the IC path and is of advantage to the enhanced performance like size reduction, faster connection and low power consumption. Furthermore, compared to the lamination between chips or lamination between packages, there are great hopes towards the 3D-integration at the wafer level that it achieves higher productivity and higher performance. .

Because MEMS device has characteristic elements with moving parts, protective packages for them are of increasing importance. Wafer Level Package (WLP) become mainstream in MEMS package, encapsulation in wafer level makes reduction of test process and drastic downsizing. In addition, surface-activated bonding has been applied due to the need for hetero wafer bonding.

By applying nanoimprint technology to MEMS, we have entered the commercial stage of using resin lenses. With low cost and heat resistant lenses, electrodes (TSVs) and wafer level mounting, "wafer level camera modules" are expected in the future to implement all camera module processes including image sensors and lenses. This CMOS image sensor is expected to play an active role not only in mobile phones but also in notebook computers and convenient game consoles. In addition, CMOS image sensors are attracting attention in the automobile industry. In recent years, 3D-pacaged high-speed image sensors have also been developed, and high-precision loading at the wafer level is accelerating.

In the field of optical communication, in Si bench unit for connecting the optical fiber, the light receiving element and LD (laser diode), the passive alignment method for chip mounting with high precision in sub-micron has been demanded. In conventional Au / Sn solder the displacement during melting has been a hinder. However, it is possible to bond in the solid phase at a low temperature and room temperature ~ 150℃ in the atmosphere by processing the surface activation by Ar plasma. The bonding accuracy dramatically improves and the productivity also does because the bonding without melting can be done in the second. Also, more reliable implementation by adopting as an electrode of Au other than the solder is performed..

We have made it possible to directly bond Nb-Nb without soldering, which is a key superconducting element material for quantum computers.

In the fielFields where even higher definition is progressing. We bond dissimilar materials with different thermal expansions at room temperature to achieve high-precision bonding of 0.1um.